CV

CV of Prof. Dr.-Ing. Peter Wellman

Education & Professional Career

since 2007: Professor at the Materials Department 6 (I-MEET) – Electronic Materials (University of Erlangen-Nürnberg) – vapor growth of wide bandgap semiconductors (in particular SiC), high temperature crystallization, thin film solar cell materials (chalcopyrite and kesterite), hybrid material composites of inorganic nanoparticles imbedded in organic semiconductors, semiconductor characterization (electrical, optical, structural).

2007: appointment for a full professorship at the Institut National Polytechnique de Grenoble (INPG) – declined.

1992: Physics Diploma at the Institute of Technical Physics 1 (University of Erlangen-Nürnberg) working with Prof. Dr. G. Döhler – spectroscopic investigations of InP n-i-p-i doping superlattices.

2006: apl. Professor at the Materials Department 6 – Electronic Materials (University of Erlangen-Nürnberg) – vapor growth of wide bandgap semiconductors (in particular SiC), organic light emitting device (OLED) research, hybrid material composites of inorganic nanoparticles imbedded in organic semiconductors, semiconductor characterization (electrical, optical, structural).

Apr. 2006: Invited Professor in the Groupe d’Etude des Semi-Conducteurs (GES) (Université Montpellier 2, France) working with Prof. Dr. Jean Camassel – electrical and optical characterization of SiC.

Jan.-Apr. 2004: Invited Professor at the Institut National Polytechnique de Grenoble (INPG), working with Prof. Dr. Michel Pons – numerical modeling of a modified physical vapor transport reactor for SiC crystal growth and optical characterization.

2001: “Privatdozent” (faculty member) at the Institute for Materials Science 6 – Electronic Materials (University of Erlangen-Nürnberg) – vapor growth of wide bandgap semiconductors, semiconductor characterization, spectroscopic investigations of organic semiconductors.

1998-2001: “Habilitation” at the  Institute for Materials Science 6 – Electronic Materials (University of Erlangen-Nürnberg) working with Prof. Dr. A. Winnacker – vapor growth and characterization of SiC single crystals.

1996-1998: PostDoc at the Materials Department (UCSB , University of California in Santa Barbara, USA) working with Prof. Dr. P.M. Petroff – hybrid ferromagnet semiconductor systems (synthesis, characterization and device technology) and tuning of self-assembled InAs quantum dots.

1995: Promotion (Dr.-Ing.) at the Institute for Materials Science 6 – Electronic Materials (University of Erlangen-Nürnberg) working with Prof. Dr. A. Winnacker – rare earth (erbium and ytterbium) doped quaternary InGaAsP semiconductors.

Associations / Professional Activities

  • treasurer of the German Crystal Growth Association (2012-2021, www.dgkk.de)
  • president of E-MRS (2019-2021)
  • senate member of E-MRS (2021-today, www.european-mrs.com)
  • member of the E-MRS executive committee (2012-2021)
  • co-chair of the development commission of IUMRS (2020-today)
  • Board member of the Joint Institute of Advanced Materials and Processes (ZMP, FAU) (2020-today)

Supervisor

  • 23 doctoral theses, 81 master theses and 117 bachelor theses

Publications

approx. 220 peer-reviewed scientific publications (often with focus on engineering topics), h-index = 26 (Scopus)

  • 1 book (on SiC growth, modeling and visualization)
  • 1 textbook on electronic materials (Springer Verlag)
  • 3 special issue
  • 3 proceedings (publications with ISBN number) of 3 Chinese German Summer Schools)

Publications – Academic Record (selection of 10 important journal contributions)

  1. J. Wellmann, J.M. Garcia, J.-L. Feng and P.M. Petroff; Formation of Nanoscale Ferromagnetic MnAs Crystallites in Low-Temperature Grown GaAs; Appl. Phys. Lett., 71(17); p.2532 (1997)
  2. J. Wellmann, M. Bickermann, D. Hofmann, L. Kadinski, M. Selder, T.L. Straubinger and A. Winnacker; In-situ visualization and analysis of silicon carbide physical vapor transport growth using digital x-ray imaging; J. Cryst. Growth 216, p.263 (1999)
  3. Weingärtner, P.J. Wellmann, M. Bickermann, D. Hofmann, T.L. Straubinger, and A. Winnacker; Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements; Appl. Phys. Lett. 80(1), p. 70 (2002)
  4. Gross, N. Linse, I. Maksimenko, P.J. Wellmann; Conductance Enhancement Mechanisms of Printable Nanoparticulate Indium Tin Oxide (ITO) Layers for application in organic electronic devices; Advanced Engineering Materials, Vol. 11(4), p. 295-301 (2009)
  5. Maksimenko, D. Kilian, C. Mehringer, M. Voigt, W. Peukert, P.J. Wellmann; Fabrication, charge carrier transport, and application of printable nanocomposites based on indium tin oxide nanoparticles and conducting polymer 3,4-ethylenedioxythiophene/polystyrene sulfonic acid; J.Appl.Phys.110, 104301 (2011)
  6. Künecke, S. Jost, R. Lechner, H. Vogt, A. Heiß, J. Palm, P. Wellmann; SEM examination of the impact of laser patterning on microscopic inhomogeneities of RTP processed Cu(In,Ga)(Se,S)2 absorbers; Thin Solid Films 535, 97-101, (2013)
  7. Wellmann, G. Neubauer, L. Fahlbusch, M. Salamon, N. Uhlmann; Growth of SiC bulk crystals for application in power electronic devices, Cryst. Res. Technol. 50, No. 1, 2–9 (2015)
  8. J. Wellmann, Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond, Z. Anorg. Allg. Chem., 643, 21, 1312 (2017)
  9. J. Wellmann, Review of SiC crystal growth technology, Semicond. Sci. Technol., 33, 103001 (2018)
  10. Arzig, M. Salamon, N. Uhlmann, P.J. Wellmann, Investigation of the Growth Kinetics of SiC Crystals during Physical Vapor Transport Growth by the Application of In-Situ 3D Computed Tomography Visualization, Advanced Engineering Materials, 1900778 (2019)